ss22 thru SS26 vishay semiconductors formerly general semiconductor document number 88748 www.vishay.com 25-jun-02 1 surface mount schottky rectifiers reverse voltage 20 to 60v forward current 2.0a 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.008 (0.203) max. 0.220 (5.59) 0.205 (5.21) 0.060 (1.52) 0.030 (0.76) 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.096 (2.44) 0.084 (2.13) cathode band mounting pad layout features ?plastic package has underwriters laboratory flammability classification 94v-0 ?low profile surface mount package ?built-in strain relief ?low power loss, high efficiency ?for use in low voltage high frequency inverters, free wheeling, and polarity protection applications ?guardring for overvoltage protection mechanical data case: jedec do-214aa molded plastic body terminals: solder plated, solderable per mil-std750, method 2026 high temperature soldering guaranteed: 250?/10 seconds at terminals polarity: color band denotes cathode end weight: 0.003 oz., 0.093 g dimensions in inches and (millimeters) 0.106 max (2.69 max) 0.050 min (1.27 min) 0.220 ref 0.083 min (2.10 min) do-214aa (smb) maximum ratings and thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol ss22 ss23 ss24 ss25 SS26 unit device marking code s2 s3 s4 s5 s6 maximum repetitive peak reverse voltage v rrm 20 30 40 50 60 v maximum rms voltage v rms 14 21 28 35 42 v maximum dc blocking voltage v dc 20 30 40 50 60 v max. average forward rectified current at t l (see fig. 1) i f(av) 2.0 a peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 75 a typical thermal resistance (2) r ja 75 r jl 17 c/w operating junction temperature range t j 65 to +125 65 to +150 c storage temperature range t stg 65 to +150 c electrical characteristics (t a = 25 c unless otherwise noted) maximum instantaneous forward voltage at 2.0a (1) v f 0.50 0.70 v maximum dc reverse current (1) t a = 25 c 0.4 at rated dc blocking voltage t a =100 c i r 10 ma notes: (1) pulse test: 300 s pulse width, 1% duty cycle (2) thermal resistance junction to lead p.c.b. mounted 0.375" (9.5mm) lead length
50 70 90 110 130 150 0 0.5 1.0 1.5 2.0 1 10 100 0 20 40 60 80 100 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10.0 50 10 100 500 0.1 1 10 100 0 20 40 60 80 100 0.001 0.01 0.1 1 10 100 ss22 - ss24 ss25 & SS26 ss22 - ss24 ss25 & SS26 ss22 - ss24 ss25 & SS26 ss22 - ss24 ss25 & SS26 at rated t l 8.3ms single half sine-wave (jedec method) pulse width = 300 s 1% duty cycle t j = 125 c t j = 125 c t j = 25 c t a = 75 c t a = 125 c t a = 25 c t j = 25 c f = 1.0 mhz vsig = 50mvp-p fig. 1 - forward current derating curve fig. 3 - typical instantaneous forward characteristics fig. 5 - typical junction capacitance fig. 2 - maximum non-repetitive surge current fig. 4 - typical reverse current characteristics average forward current (a) peak forward surge current (a) lead temperature ( c) instantaneous forwad current (a) instantaneous forward voltage (v) junction capacitance (pf) reverse voltage (v) instantaneous reverse current (ma) percent of rated peak reverse voltage (%) number of cycles at 60hz p.c.b. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas resistive or inductive load ss22 thru SS26 vishay semiconductors formerly general semiconductor www.vishay.com document number 88748 2 25-jun-02 ratings and characteristic curves (t a = 25 c unless otherwise noted)
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